BFU550R
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When You'll Get It:Aug 25 - Aug 29
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Shipping & Support: In-stock items ship in 24 hours; custom orders ship per contract. Free shipping on orders over $10,000. For bulk buys, get a personal support rep and quick reimbursement if anything's defective.
**Description**
- NPN wideband silicon RF transistor for high speed, low noise applications
- Housed in a plastic, 4-pin dual-emitter SOT‑143B surface mount package
- AEC‑Q101 qualified for automotive applications
- **Product Status:** Obsolete / End of Life (scheduled for discontinuation)
**Features**
- Low noise figure: 0.7 dB typ. @ 900 MHz
- High gain: 21 dB typ. @ 900 MHz
- High transition frequency: 11 GHz
- High breakdown voltage RF transistor
- Low noise, high linearity performance
- Suitable for small signal to medium power applications up to 2 GHz
- AEC‑Q101 qualified
- RoHS compliant and Pb‑free
- Moisture Sensitivity Level: MSL‑1 (Unlimited)
- Available in Tape & Reel packaging (3,000 pcs per reel)
**Key Specifications** (Typical @ 25°C)
- Transistor Polarity: NPN
- Collector Emitter Breakdown Voltage (V(BR)CEO): 12 V max
- Collector Base Voltage (VCBO): 24 V
- Emitter Base Voltage (VEBO): 2 V
- Continuous Collector Current (IC): 50 mA max
- Maximum DC Collector Current: 80 mA
- Power Dissipation (PD): 450 mW max
- Transition Frequency (fT): 11 GHz
- Gain: 21 dB typ. @ 900 MHz
- Noise Figure (NF): 0.7 dB typ. @ 900 MHz
- DC Current Gain (hFE) Min: 60 @ 15mA, 8V
- Output Power (P1dB): 13.5 dBm
- Operating Temperature: –40°C to +150°C
- Package / Case: SOT‑143B (TO‑253‑4)
- Package Weight: 8.439420 mg
**Applications**
- Low Noise Amplifiers (LNAs)
- RF front‑end modules
- Wireless communication systems
- Automotive RF applications
- High‑frequency oscillators
- Signal conditioning circuits
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> **Note:** All parameters are subject to the official NXP BFU550R datasheet (BFU550.pdf). Specifications are typical values and may vary with operating conditions. This product is obsolete and not recommended for new designs.
