BFU790F

**Description**
- NPN silicon germanium microwave transistor for high speed, low noise applications
- Housed in a plastic, 4-pin dual-emitter SOT343F surface mount package
- **Caution:** This device is sensitive to ElectroStatic Discharge (ESD)

**Features**
- 110 GHz fT silicon germanium technology
- Low noise high linearity microwave transistor
- High maximum output power at 1 dB compression: 20 dBm at 1.8 GHz
- Marking code: D8* (* indicates origin: p = Hong Kong, t = Malaysia, w = China)

**Key Specifications** (Typical @ 25°C)
- Transistor Type: NPN
- Collector-Emitter Breakdown Voltage (V(BR)CEO): 2.8 V
- Collector-Base Voltage (VCBO): 10 V
- Emitter-Base Voltage (VEBO): 1.0 V
- Collector Current (IC): 100 mA max
- Total Power Dissipation (Ptot @ Tsp ≤ 90°C): 234 mW
- DC Current Gain (hFE @ IC = 10 mA, VCE = 2 V): 235 min
- Transition Frequency (fT @ IC = 100 mA, VCE = 1 V): 25 GHz
- Collector-Base Capacitance (CCBS @ VCB = 2 V, f = 1 MHz): 50 fF typ.
- Noise Figure (NF @ IC = 20 mA, VCE = 2 V, f = 1.8 GHz): 0.40 dB typ.
- Maximum Power Gain (Gp(max) @ IC = 60 mA, VCE = 2.5 V, f = 1.8 GHz): 19.5 dB typ.
- Output Third-Order Intercept Point (IP3O @ IC = 30 mA, VCE = 2.5 V, f = 1.8 GHz): 33 dBm typ.
- Output Power at 1 dB Gain Compression (PL(1dB) @ IC = 85 mA, VCE = 1 V, f = 1.8 GHz): 20 dBm
- Operating Junction Temperature (Tj): 150°C max
- Storage Temperature (Tstg): –65°C to +150°C
- Package / Case: SOT-343F
- Supplier Device Package: 4-DFP

**Applications**
- High linearity applications
- LTE, cellular, UMTS
- Medium output power applications
- Wi-Fi / WLAN / WiMAX
- ZigBee

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> **Note:** All parameters are subject to the official NXP BFU790F product data sheet (Rev. 1 — 22 April 2011). Specifications are typical values and may vary with operating conditions.
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If you need other models (or the same style for previous ones), just let me know – I can reformat them all without tables. 😊