SC02201518
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When You'll Get It:Aug 25 - Aug 29
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Shipping & Support: In-stock items ship in 24 hours; custom orders ship per contract. Free shipping on orders over $10,000. For bulk buys, get a personal support rep and quick reimbursement if anything's defective.
**Description**
- MIS (Metal-Insulator-Silicon) chip capacitor
- Features a dielectric composed of thermally grown silicon dioxide with a deposited silicon nitride layer
- Single pad configuration
- Nonstandard chip surface mount package
- **Product Status:** Active / In Production
**Features**
- High reliability silicon oxide-nitride dielectric
- Low loss: typically 0.04 dB in a 50 Ω system
- Operation through 26 GHz
- Wide temperature operation: –65°C to +200°C
- Low temperature coefficient: < 50 ppm/°C
- High insulation resistance: > 10⁵ MΩ
- High Q-factor compared to ceramic capacitors
- High dielectric breakdown permits thin dielectrics for larger capacitance per unit area
- Excellent long-term stability
- RoHS compliant
- Moisture Sensitivity Level: MSL-1
**Key Specifications** (Typical)
- Capacitance: 22 pF ±20%
- Breakdown Voltage: 100 V
- Frequency Range: DC to 26.5 GHz
- Insertion Loss: 0.04 dB (typ.)
- Insulation Resistance: > 10⁵ MΩ
- Leakage Current: 1 nA
- Temperature Coefficient: < 50 ppm/°C
- Operating Temperature: –65°C to +200°C
- Size / Dimension: 0.018" L x 0.018" W (0.46mm x 0.46mm)
- Pad Dimension: 0.015" x 0.015"
- Height: 0.006" (0.15mm)
- Package / Case: Nonstandard Chip
- Packaging: Bulk
**Applications**
- DC blocking
- RF bypassing
- Fixed capacitance tuning element in filters, oscillators, and matching networks
- High temperature applications
- Electronic Warfare
- Instrumentation
- Radar
- Space Surveillance Systems
- Military Communications
- Avionics
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> **Note:** All parameters are subject to the official Skyworks SC02201518 datasheet. Specifications are typical values and may vary with operating conditions.
